SiC Coated Graphite Susceptor
ʻO Semixlab's SiC coated graphite susceptors nā mea hana kiʻekiʻe i hoʻolālā ʻia no nā kaʻina wela kiʻekiʻe e like me ka semiconductor epitaxial deposition a me MOCVD. Hoʻohana lākou i kahi substrate graphite maʻemaʻe kiʻekiʻe i uhi ʻia me kahi papa silicon carbide (SiC) ʻeleʻele, kemika inert ma o ke kaʻina CVD. Hāʻawi kēia mau susceptors i ka hoʻohālikelike wela maikaʻi loa, pale maikaʻi i ka hoʻohaumia ʻana i nā ʻāpana, a hoʻomaikaʻi nui i ka lōʻihi o nā mea. ʻO ke koho ʻana i kā mākou mau mea kōkua hiki ke kōkua iā ʻoe e hoʻomaikaʻi i ka hopena o ke kaʻina hana a hoʻemi i nā kumukūʻai mālama. Manaʻo mākou i ka lohe ʻana mai iā ʻoe.
Description
ʻO ka SiC (Silicon Carbide) coated graphite susceptor he mea koʻikoʻi ia no ka hana semiconductor, ʻoiai ke koi ʻana i nā noi wela kiʻekiʻe e like me ka epitaxial deposition a me MOCVD (Metal-Organic Chemical Vapor Deposition).
Hoʻolālā ʻia kēia mau susceptors e hoʻopaʻa a hoʻomehana i nā wafer silika me ka pololei ʻokoʻa, e hōʻoia ana i ka hāʻawi ʻana i ka mahana like ʻole a me kahi kaʻina hana maʻemaʻe. He mea koʻikoʻi kā mākou susceptors no ka hana ʻana i nā kiʻi ʻoniʻoni ʻoniʻoni kiʻekiʻe, ʻo ia ke kumu o nā mea hana semiconductor hilinaʻi a kiʻekiʻe.
Ⅰ. Nā Mea Koʻikoʻi a me nā waiwai kī
Hoʻokumu ʻia kā mākou susceptors me ka hoʻohana ʻana i ka graphite core maʻemaʻe kiʻekiʻe a me kahi papa pale o Silicon Carbide (SiC).
Kiʻekiʻe-Maʻemaʻe Graphite: Hāʻawi ka graphite substrate i ka paʻa paʻa kumu a me ka hana wela. ʻO kona kūpaʻa wela maikaʻi e hiki ai ke hana i nā wela kiʻekiʻe loa me ka ʻole deformation. ʻO ka haʻahaʻa wela haʻahaʻa o ka graphite e hiki ai i ka hoʻomehana wikiwiki a me ka maikaʻi, he mea nui ia no nā manawa pōʻai wikiwiki i kahi kaiapuni hana.
Ka uhi ʻana o Silicon Carbide (SiC): Hoʻopili ʻia ka uhi SiC i ka graphite ma o ke kaʻina CVD (Chemical Vapor Deposition). Hoʻokumu kēia i kahi ʻili paʻa, ʻaʻole porous i paʻakikī loa a inert kemika. Hāʻawi ʻo SiC i ke kūpaʻa kiʻekiʻe i ka erosion plasma a me ka hoʻouka ʻana mai nā kinoea kaʻina hana koʻikoʻi, ka pale ʻana i ka ʻinoʻino a me ka hoʻokumu ʻana o nā ʻāpana. Mālama kēia i kahi kaʻina hana maʻemaʻe, hoʻolōʻihi i ke ola o ka mea, a pale i ka graphite lalo mai ka pōʻino.
Ⅱ. Nā Pōmaikaʻi Hana ma ka Hana Wafer
He kuleana koʻikoʻi kā mākou mau mea hoʻopiʻi graphite uhi SiC i ka hōʻoia ʻana i ka maikaʻi a me ka pono o ka hana semiconductor.
● Kaulike wela like ole: ʻO ka hoʻolālā o ka susceptor, i hui pū ʻia me nā waiwai wela o SiC a me ka graphite, e hōʻoia i ka puʻunaue like ʻana o ka wela ma ka ʻili wafer holoʻokoʻa. He mea koʻikoʻi kēia no ka loaʻa ʻana o ka mānoanoa kiʻiʻoniʻoni like ʻole a me nā waiwai waiwai kūpono, ʻo ia ke kī i ka hua kiʻekiʻe.
● ʻOi aku ka mana hoʻohaumia: ʻO ka pale SiC non-porous a me ke kemika inert e pale i ka hoʻokuʻu ʻana a me ka hoʻoheheʻe ʻana mai ka substrate graphite. ʻO kēia ka mea e hōʻemi nui ai i ka pilikia o ka hoʻohaumia ʻana o ka wafer a me nā hemahema, kahi paʻakikī maʻamau i nā kaʻina hana wela kiʻekiʻe.
● Hoʻonui i ka lōʻihi a me ke ola: Hana ʻia ka pale SiC paʻa ma ke ʻano he pale pale e kūʻē i nā mea abrasive a me ka corrosive, e hoʻonui nui i ke ola o ka susceptor. Hoʻemi kēia i ke alapine o ka hoʻololi a hoʻohaʻahaʻa i nā kumukūʻai mālama holoʻokoʻa.
● Hiki ke hana hou i ke kaʻina hana kiʻekiʻe: Ma ka hāʻawi ʻana i kahi ʻano wela a paʻa mau, ʻae kā mākou poʻe susceptors i nā kaʻina hana hou. He mea nui kēia kūlike no ka hana nui ʻana o nā mea semiconductor hilinaʻi.
Ma Semixlab, ua paʻa mākou i ka hoʻolako ʻana i ka ʻoihana semiconductor me nā mea waiwai a me ka lawelawe Customization like ʻole. Hāʻawi mākou i ka hoʻolālā maʻamau a me ka hana ʻana no kā mākou SiC coated graphite susceptors. Hiki i kā mākou hui ʻenekinia ke hana pū me ʻoe e hana i kahi susceptor i kūpono loa i kāu mau kikoʻī lako a me nā koi kaʻina hana kūikawā.
hoakaka
| Nā waiwai kino kumu o ka uhi CVD SiC | |
| waiwai | Typical Value |
| Hoʻomoe Crystal | FCC β phase polycrystalline, ka mea nui (111). |
| nuʻa | 3.21 Bi / cm³ |
| paakiki | 2500 Vickers paakiki(500g ukana) |
| Ka nui o ka palaoa | 2 ~ 10μm |
| Maemae Kemika | 99.99995% |
| Kaha wela | 640 J·kg-1K-1 |
| Mahana Sublimation | 2700 ° C |
| Ka ikaika ikaika | 415 MPa RT 4-point |
| ʻO Young's Modulus | 430 Gpa 4pt piko, 1300 ℃ |
| Mahana Conductivity | 300W·m-1K-1 |
| Hoʻonui wela (CTE) | 4.5 × 10-6K-1 |
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