SiC Coated graphite heater no MOCVD
ʻO ka Semixlab SiC Coated Graphite MOCVD Heater kahi mea lawe wela kiʻekiʻe i hoʻolālā ʻia no nā kaʻina hana semiconductor e hoʻohana ana i ka deposition mahuka (CVD) e hana i kahi ʻano like ʻole, silicon carbide (SiC) uhi ma ka ʻili o kahi substrate graphite maʻemaʻe ultra-kiʻekiʻe.
Description
Nā'Ōlelo Details
Hoʻohui ka SiC Coated Graphite MOCVD Heater i ka conductivity thermal maikaʻi loa o ka graphite me ke kiʻekiʻe o ka wela a me ka pale ʻana i ka corrosion o nā coatings SiC, a hoʻohana nui ʻia i nā mea metala-organic chemical vapor deposition (MOCVD) e hōʻoia i ka paʻa a me ka maʻemaʻe kiʻekiʻe i nā kaʻina ulu epitaxy wafer.
SiC Coated Graphite MOCVD Heater Product Features
1. Ultra-kiʻekiʻe maʻemaʻe a me ka paʻa kemika
Maʻemaʻe ≥99.99995%: Hoʻomākaukau ʻia kā mākou Graphite Heater ma lalo o ka chlorination kiʻekiʻe ma o ke kaʻina CVD, ka mea e pale pono ai i ka haumia metala a hoʻokō i ka koi no nā kaiapuni ultra-maʻemaʻe i ka hana semiconductor.
Anti-chemical corrosion: ʻO ka paʻakikī a me ka paʻakikī kiʻekiʻe o ka uhi SiC (Vickers hardness o 2500-2800) hiki ke pale i ka hoʻoheheʻe ʻana o nā waikawa, alkalis, paʻakai a me nā mea hoʻoheheʻe organik, e hoʻolōʻihi i ke ola lawelawe o nā mea hana i loko o ke kinoea kinoea.

2. Kūleʻa wela kiʻekiʻe maikaʻi loa
ʻO ke kūpaʻa wela kiʻekiʻe: hiki iā ia ke kū i ka 3000 ° C i ka lewa inert, ka hana paʻa a hiki i ka 2200 ° C i loko o ka vacuum environment, a me 1600-1700 ° C i ka oxidizing environment, kahi kūpono no nā kūlana koʻikoʻi o ka MOCVD reaction chamber.
Haʻahaʻa haʻahaʻa o ka hoʻonui wela (4.5 x 10-⁶K-¹): ʻO kēia hiʻohiʻona o MOCVD Graphite Heater e hōʻemi pono i ka haki ʻana a i ʻole ka ʻili ʻana ma muli o ka hoʻololi ʻana o ka mahana, e hōʻoiaʻiʻo ana i ka pololei o ke kūkulu ʻana ma lalo o ke kaʻa kaʻa wela lōʻihi.
3. ʻOi aku ka maikaʻi o ka hoʻokele wela
ʻO ke kiʻekiʻe Thermal Conductivity (200-300 W/mK): ʻO ke kiʻekiʻe o ka thermal conductivity o ka Graphite MOCVD Heater e hoʻoholo ai e hiki i ka huahana ke hoʻololi koke i ka wela no ka hoʻokō ʻana i ka puʻu wela o ka ʻili o ka ʻili (± 1°C), a laila e hoʻomaikaʻi maikaʻi ai i ka like ʻana o ka epitaxial layer.
Laminar Gas Flow Field Design: Ma hope o ka hoʻomau ʻana i ka ʻenehana a me ka hoʻomaikaʻi ʻana, kā mākou MOCVD Heater surface smoothness (Ra ≤ 0.8μm) a me ka geometry optimization e hōʻoia i ka hāʻawi like ʻana o nā kinoea reactive a hōʻemi i ka deposition non-uniformity ma muli o ka haunaele.
hoakaka
Hoʻohālikelike ʻenehana a me nā pono
| ano | ʻO nā mea hoʻomehana Semixlab SiC i uhi ʻia | Nā mea hoʻomehana graphite maʻamau |
| ʻO ka wela hana kiʻekiʻe loa (inert) | 3000 ° C | 2500 ° C |
| Maemae Kemika | ≥99.99995% | ≤99.99 |
| Ke kaohi maʻamau | 300W/mK | 120-150 W/mK |
| Pākuʻi lina | 415 MPa (4-helu piko) | 100-200Mpa |
| Ke ola maʻamau (pōkole) | > 500 pōʻaiapuni | 100-200 pōʻaiapuni |
ʻO ka pono kūpono
No ke aha ʻo Semixlab?
Hoʻopilikino: Hoʻokumu ʻo Semixlab i ka hāʻawi ʻana i nā huahana a me nā lawelawe ʻenehana i kā mākou mea kūʻai. Kākoʻo mākou i ka hana maʻamau o nā nui maʻamau ʻole (a hiki i 360mm anawaena) a me ka mānoanoa o ka uhi ʻana (20-500μm) e hoʻokipa i kahi ākea o nā pono lako.
Global Certification: ʻO kā mākou SiC Coated Graphite Heater ka SEMI compliant, ISO 9001 certification, a ua lawe nui ʻia kā mākou huahana i ʻEulopa a me ʻAmelika Hui Pū ʻIa, a me Iapana a me South Korea, me ka uku nui / hana pono.
Synergy ʻenehana: Ua mālama lōʻihi ʻo Semixlab i ka launa pū ʻana me nā keʻena noiʻi kiʻekiʻe ma Kina, me ka hoʻohana ʻana i nā ʻenehana uhi patented (e like me ke kaʻina hana ʻo CGT Carbon's SiC³) no ka hoʻopaʻa ʻana i nā density coating a me ke kūpaʻa haʻalulu wela.

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