Pahu Uhi CVD SiC
ʻO ka CVD SiC Coating Baffle mai Semixlab he ʻāpana reactor kūloko hana kiʻekiʻe i hoʻolālā ʻia no nā noi semiconductor heteroepitaxy holomua. Hana ʻia no GaN, SiC, a me nā ʻōnaehana epitaxy semiconductor compound, hoʻomaikaʻi kēia baffle i uhi ʻia me SiC i ka hoʻolaha ʻana o ke kahe kinoea, hoʻopaʻa i nā kahua wela, a hoʻemi i ka hanauna ʻāpana i loko o nā reactors MOCVD a me CVD. ʻO kona ʻili SiC mānoanoa a ʻaʻole porous e kūʻē i ka erosion mai nā kemika precursor aggressive, e hoʻolōʻihi nui ana i ke ola o nā ʻāpana a hoʻemi i ka pinepine o ka mālama ʻana. Welina mākou i kāu nīnau.
Description
I ka hana ʻana o ka semiconductor holomua, ʻo ke kūpaʻa o ke kaʻina hana i loko o nā reactors epitaxial e hoʻoholo pololei i ka hana o ka hāmeʻa, ka hua, a me ka hilinaʻi lōʻihi. ʻO ka CVD SiC Coating Baffle a Semixlab kahi ʻāpana keʻena hana kiʻekiʻe i hana ʻia no nā wahi ulu heteroepitaxial koi, me ka silicon (Si), silicon carbide (SiC), a me nā kaʻina hana semiconductor hui. I ka hoʻohui ʻana i ka hoʻolālā kūkulu pololei me ka ʻenehana uhi silicon carbide chemical deposition (CVD) kiʻekiʻe, hāʻawi kēia huahana i ka hoʻoponopono kahe kinoea kūikawā, ka kaohi ʻāpana, a me ke kūpaʻa kahua thermal no nā kahua epitaxial hanauna e hiki mai ana.
I loko o nā reactors epitaxial, ʻoi aku hoʻi i nā reactors MOCVD a i ʻole CVD e hana ana ma luna o 1000°C a ma nā ʻōnaehana epitaxy SiC e ʻoi aku ana ma mua o 1600°C, ʻo ka dynamics kinoea kūloko a me ke ʻano like o ka thermal e hoʻopilikia nui i ka kaohi ʻana i ka mānoanoa o ka papa, ke kūlike o ka hoʻolaha ʻana o ka dopant, a me ka nui o nā hemahema kristal. Hana nā baffles i uhi ʻia me CVD SiC ma ke ʻano he hoʻokele kahe koʻikoʻi a me nā ʻāpana pale i loko o nā keʻena hana. Hoʻololi hou lākou a hoʻopaʻa i nā kahe kinoea hana, hoʻemi i ka turbulence kokoke i nā lihi wafer, a paipai i ka hoʻolaha like ʻana o ka precursor ma nā substrates anawaena nui.
Ma waho aʻe o ke kaohi ʻana i ke kahe ʻana, ʻo ka hoʻopau ʻana i ka hana ʻana o nā ʻāpana he mea nui ia no ka hoʻokō ʻana i ka hana epitaxial kiʻekiʻe. ʻO ka ʻōpala ʻana, nā microcracks, a me ka haumia mai nā mea keʻena maʻamau e hoʻokomo i nā ʻāpana submicron e hoʻohaʻahaʻa nui i ka hana o ka hāmeʻa. Hoʻohana nā baffles i uhi ʻia e CVD SiC a Semixlab i ka CVD SiC maʻemaʻe loa, e hāʻawi ana i ka density kūikawā, ka paʻakikī, a me ka inertness kemika. Hoʻokumu kēia uhi i kahi ʻili paʻa, ʻaʻole porous e kū i ka erosion e nā kinoea hana corrosive (HCl, Cl₂, a me nā derivatives silane) ʻoiai e kū nei i ka pōʻaiapuni thermal hou me ka ʻole o ka hoʻohaʻahaʻa ʻana o ke ʻano. Hoʻemi nui kēia i ka hana ʻana o nā ʻāpana a hoʻonui i ka manawa hana holoʻokoʻa.
ʻO ka hoʻokele wela ke ʻano o kekahi hana koʻikoʻi o CVD SiC Coating Baffles i loko o nā ʻōnaehana epitaxial. ʻO ke alakaʻi wela kiʻekiʻe o CVD silicon carbide a me ka coefficient haʻahaʻa o ka hoʻonui wela (CTE) e hoʻomaʻamaʻa i ka hoʻolaha like ʻana o ka wela i loko o ke keʻena. I ka wā o nā kaʻina hana ulu wela kiʻekiʻe, hana nā baffles ma ke ʻano he mea hoʻopaʻa wela, e hōʻemi ana i nā gradients mahana kūloko i hiki ke hoʻoulu i nā ʻokoʻa o nā helu ulu a i ʻole ka hoʻokomo ʻana o ka dopant.

Hoʻokō ʻo Semixlab i nā kūlana hoʻomalu maikaʻi koʻikoʻi ma o ke koho ʻana i nā mea, ka waiho ʻana o ka uhi CVD, ka pololei o ka mīkini, a me ka nānā hope loa e hōʻoia i ka mānoanoa o ka uhi ʻana, ka hoʻopili ʻana, ka maʻemaʻe, a me ke kūpaʻa o ka dimensional. Ke kūpaʻa nei ʻo Semixlab i ka hāʻawi ʻana i ke kākoʻo loea holomua a me nā hoʻonā huahana i hana ʻia no nā kaʻina hana epitaxial semiconductor. Ke kakali nei mākou i ka lilo ʻana i hoa hana lōʻihi nou ma Kina.
hoakaka
| Nā waiwai kino kumu o ka uhi CVD SiC | |
| waiwai | Typical Value |
| Hoʻomoe Crystal | FCC β phase polycrystalline, ka mea nui (111). |
| nuʻa | 3.21 Bi / cm³ |
| paakiki | 2500 Vickers paakiki(500g ukana) |
| Ka nui o ka palaoa | 2 ~ 10μm |
| Maemae Kemika | 99.99995% |
| Kaha wela | 640 J·kg-1·K-1 |
| Mahana Sublimation | 2700 ° C |
| Ka ikaika ikaika | 415 MPa RT 4-point |
| ʻO Young's Modulus | 430 Gpa 4pt piko, 1300 ℃ |
| Mahana Conductivity | 300W·m-1·K-1 |
| Hoʻonui wela (CTE) | 4.5 × 10-6K-1 |
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