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Susceptor wafer uhi SiC
Hoʻoponopono Kūmole:
Ke kumu: Hoʻolālā kūikawā no ka CVD semiconductor (1000 ° C - 1400 ° C) a me nā kaʻina hana wela kiʻekiʻe PVD, hāʻawi ia i kahi kahua kākoʻo paʻa no nā wafers.
Nā ʻāpana kumu: ʻO ke ʻano ʻino o ka ʻili Ra <0.5 μm; ʻo ka paʻakikī kiʻekiʻe (>2500 HV); ua hoʻohālikelike pono ʻia ka coefficient o ka hoʻonui ʻana i ka wela (CTE) (≈ 2.6 x 10⁻⁶/K), e hoʻopau loa i ka wafer warpage a i ʻole paheʻe i hoʻokumu ʻia e ke kaumaha wela.
Description
Hāʻawi ʻo Semixlab i ka susceptor wafer hana kiʻekiʻe. Hoʻohana nui ʻia kēia huahana i nā lako semiconductor CVD PVD e hāʻawi i ke kākoʻo no nā wafers a pale i nā pōʻino a me nā hāʻule ulia i hoʻokumu ʻia e ka kahe nitrogen.
Hoʻohana nui ʻia ʻo SiC Coated silicon carbide base (SiC coated Susceptor) i nā semiconductors ma muli o kāna mau hiʻohiʻona e like me ke kūpaʻa wela kiʻekiʻe, ke kūpaʻa corrosion, ka maʻemaʻe kiʻekiʻe a me ka liʻiliʻi o ka pollution i nā wafers.
noi:
Hoʻolālā kūikawā no ka CVD semiconductor (1000 ° C - 1400 ° C) a me nā kaʻina hana wela kiʻekiʻe PVD, hāʻawi ia i kahi kahua kākoʻo paʻa no nā wafers.
Nā hiʻohiʻona:
ʻO ke kūpaʻa wela kiʻekiʻe ʻoi aku ka maikaʻi: Ke kū nei i nā mahana wela ma luna o 1400°C, e hōʻoia ana i ke kūlana wafer pololei me ka ʻole o ka ʻokoʻa.
Pale ikaika loa: E pale pono i ka hopena o ke kahe ʻana o ka nitrogen>10 m/s a me ka hāʻule ʻole ʻana, e hāʻawi ana i ka pale kiʻekiʻe no ka wafer.
ʻO ka lōʻihi maikaʻi loa: Hāʻawi ka SiC coating i ka paʻakikī kiʻekiʻe (> 2500 HV) a me ka pale ʻana i ka corrosion, e hoʻolōʻihi i ke ola lawelawe.
Ka ʻili maʻemaʻe kiʻekiʻe: ʻO ke ʻano ʻino o ka ʻili Ra <0.5 μm, e hōʻemi ana i ka pilikia o ka palaka.
Kumu silikoni (silicon Susceptor)
Noi: He kūpono no nā kaʻina hana wela kiʻekiʻe o nā wafer silika me nā koi kiʻekiʻe loa no ka hoʻohālikelike wela (e like me ka ulu epitaxial, <1200°C).
Nā hiʻohiʻona:
● Hoʻohālikelike wela maikaʻi: E kūlike me ka mea wafer (monocrystalline silicon), ka coefficient o ka hoʻonui wela (CTE) i hoʻohālikelike pono ʻia (≈ 2.6 x 10⁻⁶/K), e hoʻopau loa i ka wafer warpage a i ʻole ka paheʻe ma muli o ke kaumaha wela.
● Hoʻopuka wikiwiki: Hoʻopōkole nuiʻia ka pōʻaiapili o nā huahana maʻamau, e like me nā wiki 4-6 (hoʻohālikelikeʻia me nā wiki 8-12 no nā kumu SiC).
● Maʻemaʻe kiʻekiʻe: Hoʻokō i nā kūlana o nā mea silika semiconductor-grade.
● Ka maikaʻi o ka ʻili: Pohi pono ʻia, ʻeleʻele ʻili Ra <0.2 μm.
hoakaka
| Nā waiwai kino kumu o ka uhi CVD SiC | |
| waiwai | Typical Value |
| Hoʻomoe Crystal | FCC β phase polycrystalline, ka mea nui (111). |
| nuʻa | 3.21 Bi / cm³ |
| paakiki | 2500 Vickers paakiki(500g ukana) |
| Ka nui o ka palaoa | 2 ~ 10μm |
| Maemae Kemika | 99.99995% |
| Kaha wela | 640 J·kg-1·K-1 |
| Mahana Sublimation | 2700 ° C |
| Ka ikaika ikaika | 415 MPa RT 4-point |
| ʻO Young Modulus | 430 Gpa 4pt piko, 1300 ℃ |
| Mahana Conductivity | 300W·m-1·K-1 |
| Hoʻonui wela (CTE) | 4.5 × 10-6K-1 |
noi
SiC epitaxial layer growth graphite susceptor.
ʻO ka hoʻololi ʻana i ka inlet kinoea a me ka mālama ʻana i ka māla wela i ka umu ulu ulu epitaxial SiC.
Hale kūʻai huahana Semixlab
