ʻO ka graphite maʻemaʻe kiʻekiʻe i manaʻo ʻia

ʻO ka graphite maʻemaʻe kiʻekiʻe i manaʻo ʻia, ʻo ke kumu wela wela no ke kolu o ka hanauna semiconductor a me ka hana kiʻi kiʻi kiʻi kiʻekiʻe, he huahana hoʻolālā i hoʻomohala ʻia e Semixlab ma muli o 20 mau makahiki o ka noiʻi a me ka ʻike hoʻomohala. Ma o ka ʻenehana hoʻoikaika ikaika a me ke kaʻina graphitization gradient kiʻekiʻe kiʻekiʻe, hiki i ka mea ke hoʻokō i ka rigidity structural a me ka paʻa o ke kaiapuni ʻaʻole hiki ke hoʻokō ʻia nā mea palupalu palupalu ma ka mālama ʻana i nā waiwai wela o ka graphite. Hoʻomaka ke kaʻina hana me nā mea ʻenehana holomua honua, ma hope o ka 1200 ℃ pre-carbonization e hana i kahi ʻano papa hoʻohaʻahaʻa, hoʻomohala ʻia ka resin phenolic haʻahaʻa haʻahaʻa i hoʻomohala ʻia, a ua hoʻomākaukau ʻia nā ʻāpana paʻakikī me 80MPa isostatic pressing technology. I loko o kahi lewa argon i pale ʻia, ke kino nei ke kino i nā hola 72 o ka graphitization gradient ma 2800 ℃, ka mea e hāpai i ka hoʻonohonoho hou ʻana o nā kalapona kalapona e hana i kahi ʻano aniani i kauoha ʻia, a hope loa i ka pololei o ka dimensional o ± 0.05mm ma o ka ʻelima-axis CNC machining center. Hiki ke hana ʻia kahi gradient coating SiC me ka mānoanoa o 50-200μm e ka chemical vapor deposition (CVD) e hoʻomaikaʻi ai i ka pale ʻana o ka oxidation.

ʻO ka graphite maʻemaʻe kiʻekiʻe ka manaʻo e hōʻike ana i ka hana piha maikaʻi loa i ke kaiapuni wela loa: ʻo ≥99.99% kāna ʻike kalapona a mālama pono ʻia ka waiwai lehu i loko o 65ppm, e hālāwai ana i nā koi o ka maʻemaʻe semiconductor grade; ʻOiai i ka wela kiʻekiʻe o 2000 ℃, mālama mau ʻo ia i ka hiki ke hoʻopaʻa ʻia o ≥3MPa, e lanakila ana i ka pilikia o ka ʻoihana e maʻalahi nā mea palupalu i ka deform a hāʻule i lalo o nā kūlana wela. Loaʻa i ka pololei o ka hoʻomalu ʻana i ka wela ma ka SiC hoʻokahi kapuaʻi ulu kristal, ʻo ia ka 40% kiʻekiʻe ma mua o ka awelika ʻoihana, a hoʻemi pono i ka nui dislocation kristal hoʻokahi ma lalo o 500cm⁻². Ma hope o 100 quenching a me ka hoʻomehana ʻana mai ka 2000 ℃ a i ka lumi wela, ʻo ka emi ʻana o ka laina mea ma lalo o 0.5%, e hōʻike ana i ka paʻa ʻana o ke kalapona kahiko ma mua o 3 mau manawa.

Ma ke kahua o ke kolu o ka hanauna semiconductor manufacturing, ua lilo ka huahana i mea nui o ka hoʻoili kino kino (PVT) SiC crystal growth furnace, hiki i kona hale hoʻoikaika ke kū i ka mahana kiʻekiʻe o 3000 ℃ me ka ʻole o ka creep structural, a me ka SIC-Si composite coating kūikawā, hiki ke hoʻokiʻekiʻe ʻia ka mahana o ka oxidation i 1800 ℃. Paʻa ka degere ʻūhā o ka umu aniani hoʻokahi ma 5 × 10^-3Pa no ka manawa lōʻihi.

ʻIkepili ʻenehana_Carbon/Carbon Composite:

1. ʻO ka SiC hoʻokahi kristal ulu ulu ahi (PVT ala)

E like me ka papa hana insulation wela o nā ʻāpana crucible graphite a pau, ʻo ka axial temperature gradient control accuracy ʻo ± 0.3 ℃/mm; Mālama ʻia ke keʻena ulu ʻana <5×10-3Pa; Hoʻemi ʻia ka nui o ka dislocation kristal hoʻokahi i <500/cm².

2. Photovoltaic polycrystalline ingot umu ahi

ʻO ka module insulation kahua wela kiʻekiʻe e hōʻemi i ka hoʻohana ʻana i ka ikehu ma 35% (hoʻohālikelike ʻia me nā ʻōnaehana kalapona maʻamau).

3. ʻEkolu hanauna semiconductor epitaxy lako

Hoʻohui ʻia me ke keʻena hoʻonā MOCVD e hoʻokō ai i ka ± 1 ℃ pae wafer pae like ʻole.

Kākoʻo i ka 8-inch GaN-on-SiC epitaxial sheet mass production.

Ka ikaika flexural kiʻekiʻe: ʻoi aku ka kiʻekiʻe ma mua o ka pae ʻoihana, a hiki i 150MPa.

Nā pōʻai wela: a hiki i 1000 mau manawa, ʻoi aku ka kiʻekiʻe ma mua o ka awelika ʻoihana.

Kākoʻo no nā lawelawe i hoʻopilikino piha ʻia: mai nā mea a hiki i ke ʻano, hiki ke maʻalahi.