Waʻa wafer quartz maʻemaʻe kiʻekiʻe

ʻO ka waʻa wafer quartz maʻemaʻe kiʻekiʻe i hana ʻia me ke one quartz synthetic ma ke kaʻina hoʻoheheʻe arc, he haʻahaʻa haʻahaʻa haʻahaʻa haʻahaʻa haʻahaʻa haʻahaʻa haʻahaʻa haʻahaʻa haʻahaʻa maikaʻi loa e hōʻoia ai ʻaʻohe pilikia o ka deformation a i ʻole ka haki ʻana i ka piʻi wikiwiki a hāʻule. Hoʻomaʻamaʻa pololei ʻia ka ʻili e hōʻemi i ka pollution particle, kūpono no ke ʻano paʻakikī a maʻemaʻe i ka hana semiconductor. Kākoʻo ka huahana i ka nui maʻamau (lōʻihi 100-500mm, ka helu o nā puka 2-24) a hoʻololi i nā nui wafer like ʻole (4 "-12").

1. Nā hiʻohiʻona kumu

Kaʻina hoʻoheheʻe ʻana o ke one quartz synthetic

Ke hoʻohana nei i ke one quartz maʻemaʻe kiʻekiʻe loa (SiO₂ maʻemaʻe ≥99.999%), hana ʻia ke aniani quartz amorphous e ka ʻenehana hoʻoheheʻe arc. Hoʻopau kēia kaʻina hana i nā hemahema palena o ka palaoa, hoʻomaikaʻi nui i ka like ʻana o nā mea, a hōʻoia i ka paʻa ʻana o nā waferboats i nā wela kiʻekiʻe (≤1250 °C).

Ka helu haʻahaʻa loa o ka hoʻonui wela

ʻO ka mea hoʻonui wela e like me ka 5.5 × 10^-7K^-1(20-300 °C), ʻae ʻaneʻane ʻaʻohe loli nui i ka piʻi wikiwiki ʻana o ka mahana a me ka hāʻule ʻana (e laʻa, 200 °C / min i nā kaʻina semiconductor), pale i nā microcracks a i ʻole deformation ma muli o ke kaumaha wela.

ʻO ka hoʻomāhuahua ʻana i ka haʻalulu haʻalulu

Ma o ke kaʻina hana gradient annealing, hiki i ka ʻokoʻa wela o ka wela wela ke hiki i 1200 ℃ → ka lumi lumi no ka ʻoi aku o 100 mau pōʻai me ka ʻole o ka haki ʻana, e hoʻokō i nā koi koʻikoʻi o ka implantation ion, annealing wikiwiki a me nā kaʻina hana ʻē aʻe.

2. Precision machining a me ka ili lapaau

ʻenehana hoʻolele nanoscale

Hoʻomalu ʻia ka ʻili o ka ʻili ma Ra≤0.2μm, a hoʻohana ʻia ka chemical mechanical polishing (CMP) i hui pū ʻia me ka etching plasma e hoʻemi pono i ka adsorption o nā ʻāpana, a ʻo ka hoʻomaʻemaʻe e like me ke kūlana SEMI F47 (helu helu ≤10 /[pale ʻia ka leka uila]μm).

ʻAi ʻAi-fouling (koho)

Hiki ke hoʻopilikino ʻia ka silicon carbide a i ʻole ka silicon nitride surface coating e hōʻemi i ka friction coefficient o ka wafer contact surface (μ≤0.05), e hōʻemi ana i ka pilikia o nā scratches a me ka neʻe ʻana o ka ion metala.

Hoʻoponopono Kūmole:

1. Nā inoa ʻē aʻe: Quartz boat, wafer bracket.

2. Noi: Ka lawe a me ka lawe ʻana i ke kaʻina hana wela o ka semiconductor wafer, kūpono no ka diffusion, oxidation a me nā kaʻina hana ʻē aʻe.

3. Nā ʻāpana kumu: ka maʻemaʻe ≥99.99%, ke kūpaʻa wela kiʻekiʻe 1200 ℃, ka helu hoʻonui wela 5.5 × 10^-7/℃.

1. Ka hana ʻana o ka wafer Semiconductor (ke kapuahi diffusion, ka umu hoʻoheheʻe).

2. Photovoltaic 'oihana silika wafer hana.

3. Hale Laboratory papa kiʻekiʻe wela hoʻokolohua wafer hali.

Ke alakaʻi nei i ka ʻoihana maʻemaʻe, metala haumia maʻiʻo <1ppm.

Ka lōʻihi o ke ola lawelawe (≥500 kiʻekiʻe wela pōʻaiapuni).

Kākoʻo i ka hana maʻamau ʻole, pōkole hāʻawi pōkole.