apo lihi SiC paa
ʻO ka Solid SiC Edge Ring kahi ʻāpana seramika kiʻekiʻe i hoʻohana ʻia i nā kaʻina hana etching plasma semiconductor. Hana ʻia mai ka silicon carbide maʻemaʻe kiʻekiʻe, hāʻawi ia i ke kūpaʻa plasma koʻikoʻi, ka lōʻihi o ke kemika, ke kūpaʻa wela, a me ke ola lawelawe lōʻihi. Me ka ʻili maʻemaʻe a me nā waiwai anti-particle, e hōʻoia i ka pale wafer maikaʻi loa a me ka hoʻomaʻemaʻe keʻena. Hāʻawi ʻo Semixlab i nā hoʻonā maʻamau a me ka lawe wikiwiki ʻana. Welina mai e kūkākūkā.
Description
Nā hiʻohiʻona hana nui
Hana ʻia ʻo Semixlab Bulk SiC Edge Ring e hoʻokō i nā koi koʻikoʻi o ka hana semiconductor e hiki mai ana. ʻO nā hiʻohiʻona hana aʻe e lilo ia i koho koho no nā keʻena etch plasma i nā mea hana kiʻekiʻe:
● Kūʻē Kūʻē Plasma Bombardment
Hana ʻia mai ka carbide silika paʻa maʻemaʻe kiʻekiʻe, hōʻike ke apo i ke kūpaʻa kūʻokoʻa i ka plasma kiʻekiʻe kiʻekiʻe, e hōʻoiaʻiʻo ana i ka liʻiliʻi o ka lole a me ka lōʻihi o ke ola ʻana ma lalo o ka pōʻino ion.
● ʻOi aku ka maikaʻi o ke kinoea kino
Hāʻawi nā mea SiC i ka inertness kemika kiʻekiʻe, me ka pale ʻana i nā kinoea etch corrosive e like me Cl₂, CF₄, a me SF₆ me ka ʻole o ka hoʻohaʻahaʻa ʻana i ka ʻili, ʻoiai ma nā wahi wela kiʻekiʻe.
● Kū'ē Kū'ē Thermal a me ke kū'ēʻana i ka Thermal Strain
Me ka thermal conductivity o 120-150 W/m·K a me ka haʻahaʻa thermal expansion coefficient (~ 4.5 × 10⁻⁶ / K), ʻo ka SiC paʻa paʻa e mālama i ke kūpaʻa dimensional a me ka pono mechanical i ka wā o ka holo wikiwiki.
● Ili Maheʻe, Hana ʻAʻohe Particle
ʻO nā ʻenehana hoʻopau ʻili kiʻekiʻe e hōʻoia i ka haʻahaʻa haʻahaʻa o ka ʻili (Ra ≤ 0.2 µm), e hōʻemi ana i ka hoʻokumu ʻana o nā ʻāpana a me ka hoʻomaʻemaʻe ʻana i nā kaʻina hoʻomaʻemaʻe keʻena, e hōʻemi ana i ka downtime.
● ʻAʻohe Warping a i ʻole Deformation i ka manawa
ʻAʻole like me nā apo lihi composite maʻamau, ʻo kā mākou monolithic SiC hoʻolālā e noho paʻa a paʻa i loko o nā kaʻina hana lōʻihi, e hāʻawi ana i ka hana hilinaʻi ma luna o nā ola lōʻihi.

No ke aha e koho ai i nā Rings Semixlab SiC Edge?
Ma Semixlab, hāʻawi mākou i ka maikaʻi kiʻekiʻe i kākoʻo ʻia e ka loea a me ka hana hou. Eia ke kumu i kū ai ʻo Semixlab SiC Edge Rings:
● Hoʻoponopono Kūʻai Kūʻai
Hāʻawi mākou i ka hana maʻamau e pili ana i kāu kikoʻī kaʻina hana, me nā anawaena o loko/waho, mānoanoa, a me nā uhi ʻili kūikawā a i ʻole nā mea leʻaleʻa, e hōʻoia ana i ke kūpono kūpono a me ka hana maikaʻi loa i kāu keʻena etch.
● Nui o nā ʻano
Kākoʻo ʻo Semixlab i nā papa hana etch like ʻole me TEL, Lam, AMAT, a me nā ʻōnaehana OEM maʻamau, me nā apo maʻamau a me nā mea hana pono e kūpono i nā pono kaʻina hana like ʻole.
● Kūleʻa Paʻa, Hoʻouna wikiwiki
Me ka hana ʻana i hōʻoia ʻia e ISO, ka mana koʻikoʻi o ka maikaʻi, a me ke kaulahao hoʻolako streamlined, hōʻoia mākou i ka hana mau ʻana, nā manawa alakaʻi pōkole, a me ka lawe ʻana i ka manawa e hoʻomau i ka neʻe ʻana o kāu hana me ke kali ʻole.
hoakaka
Nā waiwai kino kumu o Solid SiC
| Nā waiwai kino o Solid SiC | |||
| nuʻa | 3.21 | g / cm3 | |
| Kū'ē Uila | 102 | Ω/cm | |
| Ka ikaika ikaika | 590 | MPa | (6000kgf/cm2) |
| ʻO Young Modulus | 450 | GPa | (6000kgf/mm2) |
| ʻO Vickers Paʻakikī | 26 | GPa | (2650kgf/mm2) |
| CTE(RT-1000 ℃) | 4.0 | x10-6/K | |
| ʻO ka hoʻoili wela (RT) | 250 | W / mK | |
noi
Hoʻohana i ka Semiconductor Manufacturing
He mea koʻikoʻi ka Solid SiC Edge Ring i ke kaʻina hana etching plasma wafer silicon, kahi e lawelawe ai ma ke ʻano he pale a hoʻolālā i waena o ka wafer a me ka lako keʻena. Hoʻonoho ʻia a puni ka lihi o ka wafer, ʻo kēia ʻāpana e hōʻoia i ka paʻa o ke kaʻina hana, pale i ka electrostatic chuck (ESC), a hōʻemi i ka hopena o ka hoʻohaumia ʻana ma o ka pale ʻana i ka hōʻiliʻili ʻana. He mea waiwai nui ia i ka etching maloʻo kiʻekiʻe a me ka RIE (Reactive Ion Etching) kaiapuni kahi e koʻikoʻi ai ka hana hou ʻana, ka pale lumi, a me ka hilinaʻi lōʻihi.
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