CVD SiC hoʻokahi wafer susceptor

Nā hiʻohiʻona noiʻi a i ʻole nā ​​​​mea hana: AMTA epitaxial lako

ʻO ka maʻemaʻe kiʻekiʻe loa (≤100ppb, ICP-E10 i hōʻoia ʻia) a me ke kūpaʻa wela/kemika kūikawā no ka ulu ʻana i ka hoʻohaumia ʻana o GaN, SiC, a me nā epi-layers. Hoʻolālā ʻia me ka ʻenehana CVD pololei, kākoʻo ia i nā wafers 6”/8”/12, hōʻoia i ka liʻiliʻi o ke koʻikoʻi wela, a kū i nā wela wela a hiki i 1600°C.

Ka ikaika ʻoihana

ʻO Semixlab Technology Co., Ltd he 2 mau kikowaena R&D, 2 mau kumu hana, 12 laina hana, 150+ mau limahana, a me nā waihona kālā R&D no ka ʻoi aku ma mua o 30%. Hoʻohana nui ʻia kā mākou huahana i ka LED, IC integrated circuit, ke kolu o ka hanauna semiconductor, photovoltaic a me nā ʻoihana ʻē aʻe. Loaʻa iā Semixlab ka R&D ikaika, ka hana a me ka hoʻāʻo hoʻohui a me ka hiki ke hōʻoia. I ka manawa like, ke hoʻomaikaʻi mau nei mākou i kā mākou ʻenehana a me nā mea hana me ka hoʻopukapuka ʻana o nā ʻumi miliona i kēlā me kēia makahiki.

Hoʻohana nui ʻia ʻo CVD SiC hoʻokahi wafer susceptor i nā lako silicon epitaxy i hoʻopili ʻia, lawe ʻia ka mea i ka graphite + CVD SiC coating.

Nā ʻāpana kikoʻī kikoʻī: ka uhi kalapona silika a me nā mea graphite:

Nā polokalamu nui:

Ma ke ʻano he mea kōkua i nā lako epitaxy AMTA, hiki iā mākou ke hāʻawi iā 6inch 8inch 12inch wafer susceptor.

ʻO CVD SiC hoʻokahi wafer susceptor i nā lako epitaxy AMTA:

1. Kākoʻo Wafer a me ka homogenization kahua wela

Ma ke ʻano he hana nui o CVD SiC hoʻokahi wafer susceptor i AMTA epitaxy lako I MOCVD, CVD a me nā mea epitaxy ʻē aʻe, hana ʻo susceptor ma ke ʻano he wafer carrier, a hoʻoili like ʻole i ka wela i ka ʻili wafer ma o ka hoʻomehana ʻana a i ʻole ka hoʻomehana RF e hōʻoia i ka ulu like ʻana o nā papa epitaxial (eg GaN, SiC).

ʻO kāna hoʻolālā conductivity thermal kiʻekiʻe e hōʻemi i ka gradient wela ma waena o ka lihi a me ke kikowaena, e kāohi ana i ka like ʻana o ka mahana i loko o ± 1°C a pale i nā hemahema koʻikoʻi.

2. Keakea Polusi Kemika

Hiki ke hoʻoheheʻe ʻia nā substrate graphite i ka hana kinoea a lilo i CO₂ a i ʻole ka pauka, e hoʻohaumia ai ke keʻena pane. Hana ʻia ka uhi ʻana o CVD SiC ma ke ʻano he papa pale e hoʻokaʻawale i ka graphite mai nā kinoea corrosive a hoʻemi i ka hoʻohaumia ʻana i ka palaka ma ka ʻili wafer.

No ka laʻana, ma ke kaʻina hana epitaxy GaN, hiki i ka uhi ke pale pono i ka erosion o nā precursors e like me NH₃ a me TMGa, a hōʻoia i ka maʻemaʻe kiʻiʻoniʻoni.

3. Hoʻololi i nā kaʻina hana epitaxial like ʻole

Nā semiconductor o nā hanauna ʻekolu: no ka epitaxy SiC a i ʻole GaN ma nā substrates SiC, e hoʻokō i nā koi o nā mea mana kiʻekiʻe no nā kiʻiʻoniʻoni mānoanoa a me nā helu kīnā haʻahaʻa.

ʻO ka hana micro-LED: e kākoʻo i ke kūlana kiʻekiʻe a me ka hoʻokele wela o nā wafers liʻiliʻi liʻiliʻi (e laʻa, 8 iniha), a e hōʻemi i ka puʻu ʻana o ka nalu.

Nā hiʻohiʻona waiwai: hana maikaʻi loa o CVD SiC

1. ʻO ka hoʻomaʻemaʻe ultra-kiʻekiʻe a me ka hoʻolālā paʻa

ʻO ka uhi silicon carbide (SiC), waiho ʻia ma o ka hoʻoheheʻe ʻana o ka mahu (CVD), loaʻa nā pae haumia o ≤100ppb (E10 standard) e like me ka hōʻoia ʻia e ICP-MS (Inductively Coupled Plasma Mass Spectrometry). ʻO kēia hoʻomaʻemaʻe kiʻekiʻe kiʻekiʻe e hōʻemi i nā pilikia contamination i ka ulu ʻana o ka epitaxial, e hōʻoiaʻiʻo ana i ka maikaʻi o ka kristal kiʻekiʻe no nā noi koʻikoʻi e like me ka gallium nitride (GaN) a me ka silicon carbide (SiC) wide-bandgap semiconductor manufacturing.

ʻO ke ʻano o ka uhi ʻana he ʻeleʻele a ʻaʻahu hoʻi, me ka haʻahaʻa haʻahaʻa haʻahaʻa, e hōʻemi ana i ka hopena o ka hoʻokahe ʻana i nā ʻāpana a hoʻokō i nā koi kūlana kiʻekiʻe o nā lumi maʻemaʻe semiconductor.

2. Ke kū'ē kaiapuni loa

ʻO ke kūpaʻa wela kiʻekiʻe: Hiki iā ia ke mālama i ke kūpaʻa physicochemical ma 1600 ° C, ʻoi aku ka kiʻekiʻe ma mua o ka paepae oxidization o ka graphite substrate (e pili ana i 400 ° C), e hoʻolōʻihi i kona ola lawelawe.

Kū'ē Kū'ē: Kū'ē loa i nā kinoea corrosive e like me Cl₂, H₂ a me plasma erosion, kūpono no MOCVD, MBE a me nā kaʻina hana koʻikoʻi ʻē aʻe.

3. Hana maikaʻi loa i ka wela

ʻO ka conductivity wela a hiki i ka 300 W/mK e hōʻoia i ka wela ʻana o nā wafers, e hōʻemi i ka mānoanoa o ka epitaxial layer mānoanoa (e laʻa, nā pilikia hoʻololi o ka nalu), a hoʻomaikaʻi i ka hua o nā LED, nā mana mana, a me nā huahana ʻē aʻe.

ʻO ka coefficient o ka hoʻonui wela (4 × 10-⁶ / K) kokoke i ka graphite substrate, e pale ana i ka haki ʻana a i ʻole ka ʻili ʻana o ka uhi ma muli o ka hoʻololi ʻana o ka mahana.

4. Mechanical ikaika a me ka lōʻihi

ʻO ka ikaika flexural a hiki i ka 470 MPa, hiki ke kū i ke kiʻekiʻe-frequency kiʻekiʻe-mehana-haʻahaʻa-haʻahaʻa kaʻa paikikala a me ka mechanical stress, e hōʻemi ana i ke alapine mālama.

I kēia manawa, hiki i ka maʻemaʻe o kā mākou silicon carbide coating ke hiki i ka E10 i ka hoʻāʻo ICP, ʻo ia ka 100 ppb, a ʻo kēia pae maʻemaʻe i waena o ka pae kiʻekiʻe ma Kina.