Ⅰ. He aha nā hiʻohiʻona noiʻi o nā huahana ceramic silicon carbide?

Hoʻohana nui ʻia nā seramika Silicon carbide (SiC) i nā mea koʻikoʻi o nā lako kaʻina hana koʻikoʻi i ka semiconductor a me nā ʻoihana photovoltaic ma muli o ko lākou kūpaʻa kiʻekiʻe kiʻekiʻe kiʻekiʻe, pale ʻana i ka corrosion, kiʻekiʻe thermal conductivity a haʻahaʻa haʻahaʻa hoʻonui hoʻonui. Eia nā hiʻohiʻona hoʻohana kikoʻī o nā huahana maʻamau:

ʻO ka waʻa kalapona silika

Launch:

Hoʻohana mau ʻia ʻo SiC Boat no ka lawe ʻana i nā wafers (e like me nā wafers silicon a i ʻole nā ​​​​wafers silicon carbide) no ka lawe ʻana a me ka hoʻonohonoho ʻana i nā kaʻina hana wela kiʻekiʻe.

Nā kiʻi hoʻolālā:

Ke kahua hana Semiconductor: I loko o nā kapuahi diffusion a me nā kapuahi oxidation, pono e holo paʻa ka waʻa no ka manawa lōʻihi i kahi ʻano wela kiʻekiʻe ma luna o 1000 ° C e pale aku i ka deformation a i ʻole contamination o ka wafer ma muli o ke kaumaha wela.

ʻOihana Photovoltaic: Ma ka PECVD (plasma enhanced chemical vapor deposition), hoʻohana ʻia ka waʻa e kākoʻo i nā wafers silicon e waiho ai i ke kiʻi ʻoniʻoni anti-reflection silicon nitride, a pono e kū i ka pōʻino plasma kiʻekiʻe a me ke ʻano wela wela.

Puu kapuahi silikoni carbide (SiC Reaction Tube)

Hana: E like me ka mea nui o ke keʻena hoʻonā wela kiʻekiʻe, hāʻawi ia i kahi kahua wela kūlike a me kahi kaiapuni inert chemically.

Nā kiʻi hoʻolālā:

ʻOihana Semiconductor: I loko o ka umu hoʻoheheʻe ʻana, pono e noho paʻa ka pahu umu no ka manawa lōʻihi i loko o ka oxygen a i ʻole ka wai wai e pale aku ai i ka hoʻokuʻu ʻana o nā haumia ma muli o ka oxidation a i ʻole corrosion.

ʻOihana Photovoltaic: I loko o ka umu hoʻoheheʻe, hoʻohana ʻia ka paipu umu no ke kaʻina diffusion phosphorus (e like me ka hoʻomākaukau ʻana i nā cell PERC), a pono ia e pale aku i ke kinoea kinoea acidic i ka lewa POCl₃.

Ka hoe Cantilever a me ka mea paa waapa

Hana: Hoʻohana ʻia ka hoe cantilever e hoʻoneʻe ʻokoʻa i ka moku aniani, a hoʻohana ʻia ka mea hoʻopaʻa waʻa e hoʻoponopono i ke kūlana o ka waʻa aniani.

Nā kiʻi hoʻolālā:

Ma ke kaʻina hana semiconductor wafer, pono ka hoe cantilever e mālama i ka ikaika mechanical kiʻekiʻe i ka wā o ka hāpai wikiwiki a me ka hoʻohaʻahaʻaʻana e pale i ka haʻihaʻi ma muli o ka luhi wela; Pono ka mea paʻa waʻa e mālama i ka pololei geometric i ka wela kiʻekiʻe e pale ai i ka hoʻololi ʻana o ka wafer.

Ⅱ. He aha nā kuhikuhi noi o nā mea carbide silicon i nā ʻoihana photovoltaic a me semiconductor?

Hoʻopili ʻia nā noi kumu o nā huahana silicon carbide ceramic i nā loulou kaʻina o nā ʻano mea ʻelua:

Nā hōʻailona kuhikuhi	Mea kipi	ʻO nā mea kalapona silika
Paʻa wela kiʻekiʻe	E maʻalahi e hoʻoheheʻe (> 500 ° C pono e pale i ka uhi)	Anti-oxidation (hiki ke kū i ka lewa oxidizing 1600 ° C no ka manawa lōʻihi)
Inertness kemika	Maʻalahi e ʻino ʻia e nā kinoea ʻakika (e like me Cl₂, POCl₃)	ʻO ke kūpaʻa ʻana o ka ʻakika a me ka alkali (me nā media corrosive ikaika e like me HF, HNO₃)
Pilikia ka hoʻohaumia ʻana	E maʻalahi ka hoʻoulu ʻana i ka lepo lepo, ka hopena i nā hemahema wafer	ʻO ka ʻili paʻa, ʻaʻohe pilikia o ka hoʻoheheʻe ʻana o nā ʻāpana
Ka ikaika mīkini	He maʻalahi ka hoʻololi ʻana i ka wela kiʻekiʻe (koefficient hoʻonui thermal kiʻekiʻe)	ʻO ka paʻakikī kiʻekiʻe (Mohs hardness 9.2), ke kūpaʻa haʻalulu ikaika
Ke kaohi maʻamau	Anisotropy, pilikia nui o ka wela o ka wahi	ʻO ke kau wela wela kiʻekiʻe (120 W/mʻK), ke kahua wela like ʻole

ʻoihana photovoltaic

Puhi PECVD: hoʻohana ʻia e waiho i nā kiʻiʻoniʻoni anti-reflection (e like me ka silicon nitride). Pono nā ʻāpana carbide silikon e kūʻē i ka pōʻino ion ma muli o ka hoʻokuʻu ʻana o ka glow i loko o kahi wahi plasma o 400 ~ 500 ° C, ʻoiai e pale ana i ka hoʻohaumia kiʻiʻoniʻoni.

Puka ahi: hoʻohana ʻia no ka laha phosphorus/boron e hana i nā hui PN. Pono nā paipu kapuahi Silicon carbide e kū i ka corrosion mai nā kinoea POCl₃ a i ʻole BBr₃ ma 800 ~ 1000 ° C a e hōʻoia i ka like o ka doping.

ʻoihana semiconductor

ʻO ka umu hoʻoheheʻe a me ka umu hoʻoheheʻe:

ʻO ka umu hoʻoheheʻe: hoʻohana ʻia no ka hana annealing ma hope o ka hoʻokomo ʻana i ka ion. Pono nā waʻa kristal carbide silikon e pale i ka hoʻokuʻu ʻana i nā mea haumia metala (e like me Fe, Ni), i ʻole e hoʻonui ʻia ka leakage wafer.

ʻO ka umu hoʻoheheʻe: e ulu i nā ʻāpana silika dioxide i loko o ka oxygen maloʻo a i ʻole ka wai oxygen mākū. Pono nā paipu kapuahi Silicon carbide e mālama i ka haʻahaʻa o ka oxygen permeability ma kahi kiʻekiʻe o 1200 ° C e pale ai i ka mānoanoa o ka papa oxide.

Ⅲ. He aha nā mea maikaʻi o nā mea carbide silika ma mua o ka graphite?

ʻOiai ua loaʻa i nā mea graphite ka maikaʻi o ke kumukūʻai haʻahaʻa a me ka hana maʻalahi, ʻoi aku ka haʻahaʻa o ka silicon carbide i nā waiwai koʻikoʻi.

Nānā hihia kikoʻī:

Wahi a nā helu helu hana maoli o Veteksemicon, i loko o ka semiconductor diffusion furnace, pono e hoʻololi ʻia ka moku graphite i kēlā me kēia 3 mahina, ʻoiai hiki i ka waʻa silicon carbide ke mau no nā makahiki he 2, a ua hoʻonui ʻia ka hua wafer e 5% ~ 10%.

Wahi a ka ʻikepili hana i hāʻawi ʻia e Semixlab, Ma ke kaʻina hana PECVD photovoltaic, hiki i ka hoe silicon carbide cantilever hiki ke hoʻonui i ka pono pākaukau e 2% ~ 5% ma muli o ka nele o ka pollution particle.

Ⅳ. No ke aha e koho ai iā Semixlab?

ʻO Semixlab kahi mea hana nui a me ka mea hoʻolako ma Kina e kālele ana i ka noiʻi o ka graphite a me ka SiC surface coatings no 20 mau makahiki. Ma hope o nā makahiki o ka noiʻi ʻenehana a me ka hoʻomohala ʻana, hiki i kā mākou SiC coating kaʻina ke hoʻokō i ka maʻemaʻe o ka ʻoi aku ma mua o 99.98%, a hiki iā mākou ke hana i nā huahana silicon carbide o ka maʻemaʻe like ʻole a me ke kumukūʻai e like me kāu mau hiʻohiʻona noi. Inā makemake ʻoe i kahi huahana maʻemaʻe kiʻekiʻe, e like me ka hoʻopili pololei ʻana me nā huahana wafer semiconductor, hiki iā mākou ke hāʻawi iā CVD SiC coating, CVD TaC coating a me nā kaʻina hana ʻē aʻe ma ka ʻili o ka mea substrate e hoʻokō i kāu mau koi ʻenehana ikaika.