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Ka uhi ʻana o CVD Silicon Carbide (SiC).

Ka uhi ʻana o CVD Silicon Carbide (SiC).

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Kākoʻo SiC ʻo Graphite Barrel Suceptor
Kākoʻo SiC ʻo Graphite Barrel Suceptor

Kākoʻo SiC ʻo Graphite Barrel Suceptor

Hoʻoponopono Kūmole:

1. Nā inoa ʻē aʻe: Epitaxial furnace graphite barela, SiC coated wafer tray, wafer susceptor barrel type, graphite susceptor

2. Noi: No ka wafer epitaxial ulu kaʻina

3. Core nā palena: Ka homogeneity o ke kinoea kahe kahua a me ka wela kahua i loko o ka reaction keʻena hiki ke optimized ma ka hoʻohana 'ana i ka isostatic puʻe kiʻekiʻe maemae graphite matrix hui pū me ke kinikona mahu deposition (CVD) SiC uhi 'enehana me ka mahana kū'ē o 1600 ℃, thermal conductivity o 300W / m·K a me ka maemae ≥99.9995.
hoemi loa.

KA NUI
Description

ʻO ka SiC coating Graphite Wafer Epitaxy Barrel Suceptor ka mea nui e hoʻopau ʻia no nā lako ulu epitaxial SiC, a ua hui pū kāna hoʻolālā i ka conductivity thermal kiʻekiʻe o ka graphite me ke kūpaʻa koʻikoʻi o nā pale SiC. ʻO ka substrate kahi kiʻekiʻe maʻemaʻe Sigley graphite (maʻemaʻe ≥99.9995%) i hana ʻia e ke kaʻina hana kaomi isostatic. Ua waiho ʻia ka 50μm dense β-SiC coating ma ka ʻili e ka hana CVD. Hoʻopaʻa maikaʻi ia i ka hoʻokuʻu ʻana i ka haumia o ka matrix graphite i ka wela kiʻekiʻe (1200-1800 ℃) a me nā kinoea ikaika (e like me SiH4, C3H8, a me H2), e pale ana i ka haumia wafer. Hoʻolālā Barrel (no nā mea hana 4/6/8) Ma ka hoʻonui ʻana i ke ala ea a me ka hoʻohele ʻana i ka māla wela, e mālama ʻia ka mānoanoa like ʻole o ka papa epitaxial i loko o ± 1.5%, a ua hoʻemi ʻia ka defect density i <0.05cm.-2. Eia kekahi, ua hoʻohālikelike ʻia ka coefficient hoʻonui wela o ka SiC coating a me ka graphite matrix (4.5 × 10).-6/K vs 4.8×10-6/K), e pale ana i ka paʻi ʻana a i ʻole ka hoʻoheheʻe ʻia ʻana o nā ʻāpana ma muli o ke koʻikoʻi wela, a me ka hōʻoia ʻana i ka hana paʻa o nā mea hana. Ua hoʻopili ʻia ka ʻāpana i ka laina hana wafer epitaxy o nā mea hana semiconductor alakaʻi ma Kina, ua hoʻemi ʻia ke kumukūʻai epitaxy hoʻokahi-furnace e 40%, a ua hoʻonui ʻia ka huahana i 98%.

Hoʻohālikelike ʻia ke ʻano o ka barrel me ka pancake susceptor

pūʻulu ʻAʻano Barela Susceptor Pancake Susceptor
ʻAʻano Mahana Hoʻohaʻahaʻa haʻahaʻa haʻahaʻa ma muli o ke kahe ʻana o ka ea a me ka symmetry radiation (pono ka uku pānaʻi paʻakikī). He kiʻekiʻe ka symmetry kahua wela, a ʻoi aku ka maikaʻi o ka like ʻana o ka mahana ma ka mokulele.
ʻO ka maikaʻi o ke kahe kinoea Ke holo nei ka ea ma ka paia o ka barela, a ua maʻalahi ke kālai ʻia a waiho ʻia nā ʻāpana lihi. Kū pololei ke kahe i ka ʻili wafer, a ua maʻalahi ke kahe a me ke kuhikuhi.
Ka nui a me ke kumukūʻai Kiʻekiʻe throughput, kūpono no ka hana nui (nui ka nui o nā wafers i kēlā me kēia manawa). Haʻahaʻa haʻahaʻa, kūpono no ka hana R&D / liʻiliʻi.
Paʻakikī mālama Paʻakikī ka hale, a lōʻihi ka hoʻomaʻemaʻe a me ka hoʻololi ʻana. Hoʻolālā wehe, mālama maʻalahi.

hoakaka
Nā waiwai kino kumu o ka uhi CVD SiC
waiwai Typical Value
Hoʻomoe Crystal FCC β phase polycrystalline, ka mea nui (111).
nuʻa 3.21 Bi / cm³
paakiki 2500 Vickers paakiki(500g ukana)
Ka nui o ka palaoa 2 ~ 10μm
Maemae Kemika 99.99995%
Kaha wela 640 J·kg-1·K-1
Mahana Sublimation 2700 ° C
Ka ikaika ikaika 415 MPa RT 4-point
ʻO Young Modulus 430 Gpa 4pt piko, 1300 ℃
Mahana Conductivity 300W·m-1·K-1
Hoʻonui wela (CTE) 4.5 × 10-6K-1
noi

Hoʻohana ʻia no ke kaʻina hana silicon epitaxy/CVD.

Hoʻohana nui ʻia i nā polokalamu LPE a i ʻole CVD kahiko (e like me nā ʻōnaehana Aixtron mua).

ʻO ka pono kūpono

Ke kū'ē i ka pōʻino koʻikoʻi: ʻO ka uhi β-SiC ke kūpaʻa i ka erosion plasma a me ka oxidation, a ʻo kona ola he 5 mau manawa lōʻihi ma mua o ka graphite uncoated.

ʻO ka hoʻomalu kahua wela kūpono: hoʻemi ka hana ʻana o ka barela i ka haunaele, kūlike ka conductivity thermal i ka substrate, a pale aku i ka hemahema o ke kaumaha.

ʻO ka pilikia o ka hoʻohaumia ʻana: ʻo ka substrate maʻemaʻe kiʻekiʻe kiʻekiʻe a me ka uhi ʻana, nā mea haumia metala (Fe, Al) maʻiʻo <0.1ppm.

ʻO ke kaʻina hana holoʻokoʻa: kākoʻo i ka hoʻoili ʻana i ka matrix, ka waiho ʻana i ka uhi, ka hoʻāʻo ʻana i ka hana hoʻokahi.

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