MOCVD SiC Coated Graphite Susceptor

1. Hoʻonui ʻia ke ola e 300%+

Hiki i ka ʻenehana papa paʻa ke ʻoi aku ka nui o nā pōʻai haʻalulu wela ma mua o 5,000 mau manawa (emi ma mua o 1,500 mau manawa no nā huahana maʻamau).

Hiki i ka mahana hana hoʻomau ke hiki i 1650 ° C, a ʻaʻole hōʻike ka uhi ʻana i nā māwae a i ʻole peeling.

2. Hōʻoiaʻiʻo ʻole pollution

ʻO ka maʻemaʻe o ka uhi SiC he 6N ka helu (ka nui o nā mea haumia metala <0.5ppm).

Ua ʻaʻa i ka SEMI maʻamau hoʻokuʻu ʻana i nā ʻāpana ʻāpana (Class 10 cleanliness).

3. Thermal kahua uniformity upgrade

ʻO ka ʻokoʻa wela ma ka ʻili kumu ma lalo o ± 2 ° C (nā ʻikepili i ana no ka kikoʻī Φ300mm).

Kākoʻo i ka hoʻomehana wikiwiki (20 ° C / s) me ka hoʻololi ʻole o ka wela.

4. Kūleʻa maikaʻi i ka corrosion

Kūleʻa i ka corrosion e nā kinoea e like me H2, NH3, a me TMAl, me ke ola lawelawe ʻoi aku ma mua o 18 mahina.

ʻOi aku ka liʻiliʻi o ka hoʻololi ʻana o ka ʻinoʻino ma mua o 5% (hoʻāʻo ʻia ma hope o 100 mau kaʻina hana).

5. He kūpono me nā hiʻohiʻona nui o ka honua

Kākoʻo i ka hana maʻamau i nā anawaena mai 50 a 500mm.

6. Full Life pōʻaiapuni kumukūʻai optimization

Ua hoʻonui ʻia ka pōʻai mālama i ʻekolu manawa ma mua o nā huahana maʻamau.

Ua hoʻonui ʻia ka hua o nā wafers epitaxial e 2-3%.

Ka ikaika ʻoihana

ʻO Semixlab Technology Co., Ltd he 2 mau kikowaena R&D, 2 mau kumu hana, 12 laina hana, 150+ mau limahana, a me nā waihona kālā R&D no ka ʻoi aku ma mua o 30%. Hoʻohana nui ʻia kā mākou huahana i ka LED, IC integrated circuit, ke kolu o ka hanauna semiconductor, photovoltaic a me nā ʻoihana ʻē aʻe. Loaʻa iā Semixlab ka R&D ikaika, ka hana a me ka hoʻāʻo hoʻohui a me ka hiki ke hōʻoia. I ka manawa like, ke hoʻomaikaʻi mau nei mākou i kā mākou ʻenehana a me nā mea hana me ka hoʻopukapuka ʻana o nā ʻumi miliona i kēlā me kēia makahiki.

Nā palena hana koʻikoʻi

Nā palena papahana

ʻO ka mea kumu ʻo SGL isostatic pressed graphite

Ka mānoanoa o ka uhi: 80-200μm (hiki ke hoʻololi ʻia)

ʻO ka maʻemaʻe o ka uhi ʻana he ≥99.9999%

Māmā: 1.85-1.90 g/cm³

Ka hoʻoili wela: 125 W/m·K (RT)

Ka ikaika wiliwili ≥45 MPa

ʻO ka mahana hana ≤1800°C (ka lewa ʻole)

Pūnaehana hōʻoia maikaʻi

Hiki i ke kaʻina hana piha: Hoʻopaʻa ʻikepili piha mai ka substrate graphite a hiki i ke kaʻina hana uhi.

ʻIke pololei: ʻO ka nānā ʻana i ka uhi uhi SEM/EDS, ka ʻike leak helium mass spectrometry, ka hoʻāʻo ʻana i ka wela wela kiʻekiʻe.

Nā waiwai kino kumu o ka uhi CVD SiC:

Nā hiʻohiʻona noiʻi a i ʻole nā ​​​​mea hana: Aixtron Epi lako

Nā hiʻohiʻona noiʻi kumu

● LED chip manufacturing: GaN uliuli/keʻokeʻo LED epitaxial ulu.

● Nā mea hoʻoheheʻe mana: SiC/GaN mea mana (MOSFET, HEMT).

● 5G mau mea lekiō lekiō: kiʻekiʻe frequency microwave frequency chip substrate.

● Laser diode: VCSEL, kaʻina epitaxial laser e hoʻokuʻu i ka ʻaoʻao.

● ʻO ka hoʻopili kiʻekiʻe: Ka waiho ʻana o nā kiʻi ʻoniʻoni lahilahi semiconductor kiʻekiʻe.

ʻO ka ʻike o ke kaulahao ʻoihana epitaxy chip semiconductor: